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| JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -230 -230 -5 -17 -5 200 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ; IB=0 IC=-5A ;IB=-0.5A VCB=-230V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-2A ; VCE=-12V 50 500 35 MIN -230 TYP. 2SA1295 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT MAX UNIT V -2.0 -100 -100 140 |I |I V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12| IB1=-IB2=-0.5A VCC=-60V 0.35 1.50 0.30 |I |I |I s s s hFE classifications O 50-100 Y 70-140 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1295 Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1295 4 |
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